Anterwell Technology Ltd.
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Collector-base Voltage: | −40 V | Collector-emitter Voltage: | −40 V |
---|---|---|---|
Emitter-base Voltage: | −6 V | Collector Current: | −200 MA |
Peak Collector Current: | −200 MA | Storage Temperature: | −65 To +150 °C |
High Light: | multi emitter transistor,silicon power transistors |
PMBT3906 PNP switching transistor
General description
PNP switching transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
NPN complement: PMBT3904.
Features and benefits
Collector-emitter voltage VCEO = −40 V
Collector current capability IC = −200 mA
Applications
General amplification and switching
Quick reference data
Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
VCEO | collector-emitter voltage | open base | - | - | −40 | V |
IC | collector current | - | - | −200 | V |
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol | Parameter | Conditions | Min | Max | Unit |
VCBO | collector-base voltage | open emitter | - | −40 | V |
VCEO | collector-emitter voltage | open base | - | −40 | V |
VEBO | emitter-base voltage | open collector | - | −6 | V |
IC | collector current | - | -200 | mA | |
ICM | peak collector current | - | -200 | mA | |
IBM | peak base current | - | -100 | mA | |
Ptot | total power dissipation | Tamb ≤ 25 °C [1] | - | 250 | mW |
Tj | junction temperature | - | 150 | °C | |
Tamb | ambient temperature | -65 | +150 | °C | |
Tstg | storage temperature | -65 | +150 | °C |
[1] Device mounted on an FR4 Printed-Circuit Board (PCB).
Package outline SOT23 (TO-236AB)
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