Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
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Collector−Emitter Voltage: | 40 Vdc | Collector−Base Voltage: | 60 Vdc |
---|---|---|---|
Emitter−Base Voltage: | 6.0 Vdc | Collector Current − Continuous: | 200 MAdc |
Junction And Storage Temperature: | −55 To +150 °C | ||
High Light: | power mosfet ic,multi emitter transistor |
General Purpose Transistor
NPN Silicon
MAXIMUM RATINGS
Rating | Symbol | Value | Unit |
Collector−Emitter Voltage | VCEO | 40 | Vdc |
Collector−Base Voltage | VCBO | 60 | Vdc |
Emitter−Base Voltage | VEBO | 6.0 | Vdc |
Collector Current − Continuous | IC | 200 | mAdc |
THERMAL CHARACTERISTICS
Characteristic | Symbol | Max | Unit |
Total Device Dissipation FR−5 Board (Note 1) @TA = 25°C Derate above 25°C |
PD | 225 1.8 | mW mW/°C |
Thermal Resistance, Junction−to−Ambient | RJA | 556 | °C/W |
Total Device Dissipation Alumina Substrate, (Note 2) @TA = 25°C Derate above 25°C |
PD |
300 2.4 |
mW mW/°C |
Thermal Resistance, Junction−to−Ambient | RJA | 417 | °C/W |
Junction and Storage Temperature | TJ, Tstg | −55 to +150 | °C |
Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. F
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